Method for manufacturing contact on silicon carbide substrate and silicon carbide semiconductor device

The present disclosure relates to a method for making a contact on a SiC substrate, wherein the method comprises: providing a crystalline SiC substrate; modifying the crystal structure in the surface region of the SiC substrate and thereby generating a carbon-rich SiC portion in the surface region; forming a contact layer on the SiC substrate by depositing a metallic contact material onto a surface region including the carbon-rich SiC portion; and thermally annealing at least a portion of the carbon-rich SiC portion of the SiC substrate and at least a portion of the contact layer, thereby generating a ternary metallic phase portion comprising at least the metallic contact material, silicon, and carbon. Still further, a SiC semiconductor device is described, comprising: a crystalline SiC substrate; and a contact layer including a ternary metallic phase portion in direct contact with the surface of the SiC substrate. 本公开涉及一种用于在SiC衬底上制造接触的方法，其中方法包括：提供晶体SiC衬底；对SiC衬底的表面区域中的晶体结构进行修改，并且由此在表面区域中生成富碳的SiC部分；通过将金属性接触材料沉