Ring dipole excited high-Q-value terahertz metasurface sensor
The embodiment of the invention provides a ring dipole excited high-Q-value terahertz metasurface sensor. The ring dipole excited high-Q-value terahertz metasurface sensor comprises a substrate; the metal film is formed on the surface of the substrate; the metasurface unit structures are arranged on...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The embodiment of the invention provides a ring dipole excited high-Q-value terahertz metasurface sensor. The ring dipole excited high-Q-value terahertz metasurface sensor comprises a substrate; the metal film is formed on the surface of the substrate; the metasurface unit structures are arranged on the surface, away from the substrate, of the metal film in a periodic array mode; wherein the metasurface unit structure comprises two L-shaped metal structures, the short edges of the two L-shaped metal structures are oppositely arranged, and the two L-shaped metal structures are arranged in a spaced mode. The double-L-shaped metal structure metasurface arranged periodically is adopted, when a terahertz electric field is in normal incidence in the vertical direction, an annular dipole resonance mode in the metasurface is excited, interaction between terahertz waves and analytes is enhanced, intense spectrum change is caused, and then the sensing performance of the sensor is improved. Therefore, the detection of t |
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