Silicon carbide wave-absorbing material with multi-layer structure and preparation method of silicon carbide wave-absorbing material

The invention provides a multilayer structure silicon carbide wave-absorbing material and a preparation method thereof.The multilayer structure silicon carbide wave-absorbing material comprises a first plane layer, a first circular tube layer, a second plane layer, a second circular tube layer and a...

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Hauptverfasser: CHEN GENGYUN, SHEN YUN, XU BIN, HONG YUZHE, WU GUOPING, YAN XIAOBIN, DU YUEFENG, XUE ZHENKUN, WANG YONGHUI, JIANG JIASHAN, ZHANG BIYING, HE GUANGQI, GUO DAIDONG, REN KEJIE, WU YANJIAO, XIONG LIJUN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a multilayer structure silicon carbide wave-absorbing material and a preparation method thereof.The multilayer structure silicon carbide wave-absorbing material comprises a first plane layer, a first circular tube layer, a second plane layer, a second circular tube layer and a third plane layer which are sequentially arranged in a stacked mode, and the first circular tube layer and the second circular tube layer comprise a plurality of hollow circular tubes arranged in parallel; the adjacent hollow circular pipes abut against each other, and the silicon carbide wave-absorbing material with the multilayer structure comprises the following raw materials in percentage by mass: 40-80% of silicon carbide powder, 10-40% of paraffin, 5-10% of thermoplastic resin, 1-5% of stearic acid and 1-5% of a sintering aid. The silicon carbide material is improved in the aspects of raw material composition and structure, and by adjusting the thermoplastic resin, the wave-absorbing frequency band of the ma