Silicon carbide wave-absorbing material with multi-layer structure and preparation method of silicon carbide wave-absorbing material
The invention provides a multilayer structure silicon carbide wave-absorbing material and a preparation method thereof.The multilayer structure silicon carbide wave-absorbing material comprises a first plane layer, a first circular tube layer, a second plane layer, a second circular tube layer and a...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a multilayer structure silicon carbide wave-absorbing material and a preparation method thereof.The multilayer structure silicon carbide wave-absorbing material comprises a first plane layer, a first circular tube layer, a second plane layer, a second circular tube layer and a third plane layer which are sequentially arranged in a stacked mode, and the first circular tube layer and the second circular tube layer comprise a plurality of hollow circular tubes arranged in parallel; the adjacent hollow circular pipes abut against each other, and the silicon carbide wave-absorbing material with the multilayer structure comprises the following raw materials in percentage by mass: 40-80% of silicon carbide powder, 10-40% of paraffin, 5-10% of thermoplastic resin, 1-5% of stearic acid and 1-5% of a sintering aid. The silicon carbide material is improved in the aspects of raw material composition and structure, and by adjusting the thermoplastic resin, the wave-absorbing frequency band of the ma |
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