Magnetic memory element and semiconductor device

A magnetic memory element (10) is provided with a reference layer (11) whose magnetization direction is fixed, a tunnel barrier layer (12) provided on the reference layer (11), a magnetic memory layer (13) provided on the tunnel barrier layer (12) and whose magnetization direction is variable, a hig...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KARIYADA EIJI, TANIGAWA HIRONOBU, KAGEYAMA, YUUTO, ENDO MASAKI, SATO AKIRA, TANABE HIROMOTO, UCHIDA HIROYUKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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