Magnetic memory element and semiconductor device

A magnetic memory element (10) is provided with a reference layer (11) whose magnetization direction is fixed, a tunnel barrier layer (12) provided on the reference layer (11), a magnetic memory layer (13) provided on the tunnel barrier layer (12) and whose magnetization direction is variable, a high Hk application layer (14) provided on the magnetic memory layer (13) and improving magnetic anisotropy of the magnetic memory layer (13), and a cap layer (15) provided on the high Hk application layer (14). For the magnetic memory element, the material of the high Hk applied layer (14) is different from the material of the cap layer (15), and the material of the high Hk applied layer (14) is a high melting point metal. 磁性存储器元件(10)设置有：其磁化方向固定的参考层(11)、在参考层(11)上设置的隧道势垒层(12)、在隧道势垒层(12)上设置并且其磁化方向可变的磁性存储层(13)、在磁性存储层(13)上设置并改善磁性存储层(13)的磁各向异性的高Hk施加层(14)，以及在高Hk施加层(14)上设置的盖层(15)。针对该磁性存储器元件，高Hk施加层(14)的材料与盖层(15)的材料不同，并且高Hk施加层(14)的材料是高熔点金属。