Magnetically coupled RF filter for substrate processing chamber

A semiconductor processing chamber for processing a semiconductor substrate may include a susceptor for supporting a substrate having a heater region and a wire mesh configured to deliver a radio frequency (RF) signal to a plasma. The chamber may also include a heater zone control that delivers electrical current to the heater zone, and a filter circuit between the heater zone control and the heater zone. The filter circuit may include an inductor on the lead from the heater region, and a resonant circuit having a resonant inductor magnetically coupled to the lead inductor. The resonant circuit may generate a resonance peak that filters an RF signal delivered from a lead from the heater zone to the wire mesh to prevent the RF signal from reaching the heater zone control. 一种用于处理半导体基板的半导体处理腔室可包括用于支撑基板的基座，其具有加热器区域和被配置为将射频(RF)信号输送至等离子体的金属丝网。腔室也可包括将电流输送至加热器区域的加热器区域控制件，以及在加热器区域控制件与加热器区域之间的滤波器电路。滤波器电路可包括在来自加热器区域的引线上的电感器，以及具有磁耦接至引线电感器的谐振电感器的谐振电路。谐振电路可产生谐振峰值，所述谐振峰值对从来自加热器区域的引线输送至金属丝网的RF信号进行滤波以防止RF信号到达加热器区域控制件。