SERIAL GATE TRANSISTOR AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME

The invention provides a serial gate transistor and a non-volatile memory device including the same. In some embodiments, a non-volatile memory device includes a plurality of memory blocks, a plurality of channel transistor blocks, and a plurality of gates sequentially arranged in a horizontal direction in a gate region over a semiconductor substrate. Each of the plurality of channel transistor blocks includes a plurality of serial gate transistors configured to transfer a plurality of drive signals to respective ones of the plurality of memory blocks. Each of the plurality of serial gate transistors includes a first source-drain region, a gate region, and a second source-drain region sequentially arranged in a horizontal direction at the semiconductor substrate. The plurality of gates are electrically decoupled from each other. A plurality of block selection signals respectively applied to the plurality of gates are controlled independently of each other. 本公开提供了串行栅极晶体管和包括串行栅极晶体管的非易失性存储器设备。在一些实施例中，非易失性存储器设备包括