High-tap-density homologous heterostructure FeSe electrode material and preparation method thereof

The invention discloses a high-tap-density homologous heterostructure FeSe electrode material and a preparation method thereof, and belongs to the technical field. The FeSe electrode material contains a homologous heterostructure composed of a tetragonal crystal phase t-FeSe and a hexagonal crystal...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GONG FENGLIAN, MIAO YUE, HU SHILIN, XIAO YING, CHEN SHIMOU
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention discloses a high-tap-density homologous heterostructure FeSe electrode material and a preparation method thereof, and belongs to the technical field. The FeSe electrode material contains a homologous heterostructure composed of a tetragonal crystal phase t-FeSe and a hexagonal crystal phase h-FeSe, and the tap density of the FeSe electrode material is as high as 2.57 cm < 3 > g ; iron powder and selenium powder are uniformly mixed by using an agate mortar, and are heated and reduced by using a tubular furnace to prepare the homologous heterostructure FeSe electrode material. The prepared carbon-free homologous heterogeneous crystalline phase FeSe electrode material is used as a sodium ion battery negative electrode, and shows good structural stability and excellent rate capability; charge redistribution and lattice distortion at a heterogeneous phase boundary can improve the charge transfer efficiency, provide a channel for metal ion transmission, provide additional active sites for a rever