Preparation method of semiconductor structure

The invention provides a preparation method of a semiconductor structure. The preparation method comprises the following steps: providing a substrate; forming a multi-layer structure on the substrate, wherein the multi-layer structure comprises a first carbon layer, a silicon layer, an oxide layer and a second carbon layer which are sequentially arranged on the substrate; patterning the second carbon layer to form a first patterned carbon layer; patterning the oxide layer by using the first patterned carbon layer as a mask to form a first patterned oxide layer; forming a second patterned oxide layer, wherein a part of the second patterned oxide layer is separated from each other, and the second patterned oxide layer and a part of the first patterned oxide layer are alternately arranged; and converting a pattern of the first patterned oxide layer and the second patterned oxide layer to the substrate. 本公开提供一种半导体结构的制备方法，包含提供一基板；形成一多层结构于该基板之上，其中该多层结构包括一第一碳层、一硅层、一氧化层以及一第二碳层依序设置于该基板上；图案化该第二碳层以形成一第一图案化碳层；利用该第一图案化碳层当