Neutral particle beam generating device for plasma etching

The invention discloses a neutral particle beam generating device for plasma etching, which comprises a discharge bin and a neutral particle beam generating mechanism, and is characterized in that a radio frequency antenna is arranged outside the discharge bin, and the radio frequency antenna is con...

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Bibliographische Detailangaben
Hauptverfasser: NIE JUNWEI, JIN FANYA, YANG FAZHAN, LIU KEWEI, ZHU TUFU, CHEN QINGCHUAN, DAN MIN, CHEN LUNJIANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a neutral particle beam generating device for plasma etching, which comprises a discharge bin and a neutral particle beam generating mechanism, and is characterized in that a radio frequency antenna is arranged outside the discharge bin, and the radio frequency antenna is connected with a pulse radio frequency power supply, so that plasma is formed in the discharge bin; the neutral particle beam generation mechanism comprises a gas circuit electrode, an extraction generation grid electrode and a bias power supply group, and the gas circuit electrode and the extraction generation grid electrode are connected through the bias power supply group and are respectively arranged on two opposite sides of the discharge bin so as to accelerate negative ions in the plasma, so that the negative ions are emitted through the extraction generation grid electrode to form a neutral particle beam; the lead-out generation grid electrode can be used for carrying out speed reduction and neutralization trea