Fault-tolerant repair method, stacked chip and storage medium
The invention provides a fault-tolerant repair method, a stacked chip and a storage medium, the fault-tolerant repair method is applied to a control circuit of a fault-tolerant repair circuit, the fault-tolerant repair circuit further comprises a detection circuit and a plurality of repair circuits,...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a fault-tolerant repair method, a stacked chip and a storage medium, the fault-tolerant repair method is applied to a control circuit of a fault-tolerant repair circuit, the fault-tolerant repair circuit further comprises a detection circuit and a plurality of repair circuits, and the detection circuit is electrically connected with a silicon channel component of the stacked chip. The input end of the repair circuit is connected between a first wafer of the stacked chips and at least one silicon channel component, the output end of the repair circuit is connected between the first wafer and a second wafer of the stacked chips, and the control circuit is in communication connection with the detection circuit and the repair circuit; the method comprises the following steps: averagely grouping silicon channel components according to a first number; dividing the silicon channel components in the component group into conventional silicon channel components and redundant silicon channel compo |
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