Fault-tolerant repair method, stacked chip and storage medium

The invention provides a fault-tolerant repair method, a stacked chip and a storage medium, the fault-tolerant repair method is applied to a control circuit of a fault-tolerant repair circuit, the fault-tolerant repair circuit further comprises a detection circuit and a plurality of repair circuits,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MO XIAOLIN, ZHAO YI, LI SHAOBAI, CHEN YUWEN, HU KUNMEI
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention provides a fault-tolerant repair method, a stacked chip and a storage medium, the fault-tolerant repair method is applied to a control circuit of a fault-tolerant repair circuit, the fault-tolerant repair circuit further comprises a detection circuit and a plurality of repair circuits, and the detection circuit is electrically connected with a silicon channel component of the stacked chip. The input end of the repair circuit is connected between a first wafer of the stacked chips and at least one silicon channel component, the output end of the repair circuit is connected between the first wafer and a second wafer of the stacked chips, and the control circuit is in communication connection with the detection circuit and the repair circuit; the method comprises the following steps: averagely grouping silicon channel components according to a first number; dividing the silicon channel components in the component group into conventional silicon channel components and redundant silicon channel compo