Coupling method of DFB laser chip and high-Q silicon nitride external cavity chip
The invention provides a coupling method of a DFB laser chip and a high-Q silicon nitride external cavity chip, and relates to the technical field of laser, and the DFB laser chip and the high-Q silicon nitride external cavity chip comprise a DFB laser and a coated lens arranged at one side of the D...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a coupling method of a DFB laser chip and a high-Q silicon nitride external cavity chip, and relates to the technical field of laser, and the DFB laser chip and the high-Q silicon nitride external cavity chip comprise a DFB laser and a coated lens arranged at one side of the DFB laser; the mirror surface of the coated lens is arranged opposite to the laser emitting position of the DFB laser and used for converging and collimating laser, the silicon lens and the silicon-based micro-ring resonator are sequentially arranged along the output optical axis of the DFB laser, one side of the silicon lens is opposite to the coated lens, the other side of the silicon lens is opposite to an inlet waveguide of the silicon-based micro-ring resonator, and the silicon lens and the silicon-based micro-ring resonator are sequentially arranged along the output optical axis of the DFB laser. Focusing the converged and collimated laser to an input waveguide port of a vibration cavity of the silicon-based m |
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