LED chip with vertical structure

The invention relates to the technical field of LED chips, and particularly provides a vertical structure LED chip which comprises a substrate layer, an N-type conductive metal layer, an insulating layer, a P-type conductive metal layer, a p-GaN layer, an InGaN/GaN multi-quantum well layer and an n-GaN layer which are connected in sequence, the insulating layer comprises a plurality of through holes penetrating through the P-type conductive metal layer, the p-GaN layer and the InGaN/GaN multi-quantum well layer, and the n-GaN layer comprises a plurality of through holes penetrating through the p-type conductive metal layer, the p-GaN layer and the InGaN/GaN multi-quantum well layer. The N-type conductive metal layer is connected with the n-GaN layer through the through hole; the two P electrodes are symmetrically arranged in the center of the edge of the P-type conductive metal layer; the chip can effectively solve the problem that as the two P electrodes are symmetrically arranged at the intersection of the