Manufacturing method of backside illuminated EBAPS

The invention discloses a manufacturing method of a backside illuminated EBAPS, and the method employs a scheme that a backside illuminated APS image sensing chip is combined with a vacuum photoelectric cathode, the photoelectric cathode can convert a weak optical signal into an electronic signal, the surface of a CMOS chip is bombarded by high-energy electrons through the acceleration of a high-voltage electric field, the multiplication is generated in the CMOS, and the photoelectric cathode is used for converting the weak optical signal into the electronic signal. The CMOS amplifies and converts the received electronic signal to generate a digital signal; therefore, the EBAPS device not only has good low-illumination performance of a traditional low-light night vision device image intensifier, but also has the characteristics of high frame rate, high resolution and the like of a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor. The problems that an existing traditional low-light night