Radiation-resistant reinforced semiconductor device structure

The invention relates to an anti-radiation reinforced semiconductor device structure, which comprises a substrate, the substrate comprises a front surface, and a front surface process is carried out on the front surface of the substrate so as to prepare a normal-pressure power device unit and a high-voltage power device unit at the same time; the normal-pressure power device unit comprises at least one normal-pressure power device, the high-voltage power device unit comprises at least one high-voltage power device, and the normal-pressure power device and the high-voltage power device are mutually isolated and independent; active region units which are isolated from each other are formed in the high-voltage power device, the active region units are provided with first junction depths, and the first junction depths are larger than the junction depths of the active region units of the normal-voltage power device, so that the withstand voltage of the high-voltage power device is not lower than that of the normal