Manufacturing process of semiconductor device and semiconductor device

The invention relates to the technical field of semiconductors, and discloses a manufacturing process of a semiconductor device and the semiconductor device, a silicon-on-insulator (SOI) device can be grown on a substrate by thinning a first region at the top of a silicon wafer from bottom to top and sequentially growing an epitaxial layer and a semiconductor layer on the thinned silicon wafer, and the manufacturing process of the semiconductor device comprises the following steps of: growing a silicon-on-insulator (SOI) device on the substrate; according to the substrate provided by the invention, an SOI device does not need to be grown only on an SOI wafer, the production cost of the SOI device is reduced, in addition, an SOI FinFET and a bulk silicon FinFET can be produced on the same substrate through the substrate provided by the invention, and the integration of the manufacturing process of the SOI FinFET and the manufacturing process of the bulk silicon FinFET is realized. 本发明涉半导体技术领域,公开了一种半导体器件的制造工艺和半