Beryllium oxide base

A substrate having a top and a bottom and comprising a beryllium oxide composition containing at least 95 wt% beryllium oxide and optionally fluorine/fluorine ions. The substrate exhibits a clamping pressure of at least 133 kPa at a temperature of at least 600 DEG C and a bulk resistivity of greater...

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Bibliographische Detailangaben
Hauptverfasser: LU GORDON V, SMITH, LARRY, T, KUSNER ROBERT E, GRESSING FRITZ C, AZAT ZAN, SAYER AARON B, CAMPBELL, JEFFREY, R, ZHANG JING H
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A substrate having a top and a bottom and comprising a beryllium oxide composition containing at least 95 wt% beryllium oxide and optionally fluorine/fluorine ions. The substrate exhibits a clamping pressure of at least 133 kPa at a temperature of at least 600 DEG C and a bulk resistivity of greater than 1 x 105 ohm-m at a temperature of 800 DEG C. 具有顶部和底部且包含氧化铍组合物的基板,该氧化铍组合物含有至少95wt%的氧化铍和可选的氟/氟离子。该基板在至少600℃的温度表现出至少133kPa的夹持压力,在800℃的温度表现出大于1x 105ohm-m的体电阻率。