Power semiconductor module

The present disclosure relates to a power semiconductor module (1) comprising: at least two groups (2, 3; 31, 32, 33, 34), the semiconductor switches (4) of each group (2, 3; 31, 32, 33, 34) are connected in parallel; a module gate contact (5); a group gate contact (6, 7) for each group; a first branch point (8) connected to the module gate contact (5) and the group gate contact (6, 7); a gate path between the module gate contact (5) and the first branch point (8), said gate path being for at least one of said at least two groups (2, 3; the semiconductor switches (31, 32, 33, 34) are shared; a compensation structure (9; 9 ') in the connection path between the first branch point (8) and the gate terminals (10) of the semiconductor switches (4) of the at least one group (3); 39) for increasing the inductance of the connection path. 本公开涉及一种功率半导体模块(1)，其包括：并联连接的至少两组(2、3；31、32、33、34)的半导体开关(4)，每个组的半导体开关(4)在该组(2、3；31、32、33、34)内并联连接；模块栅极接触部(5)；用于每个组的组栅极接触部(6、7)；第一分支点(8)，其连接到模块栅极接触部(5)和组栅极接触部(6、7)；模块栅极接触部(5)与第一分支点(8)之间