Evaluation method for anisotropic characteristics of semiconductor resistivity and Seebeck coefficient
The invention provides a method for evaluating anisotropic characteristics of semiconductor resistivity and Seebeck coefficient. The method for evaluating the anisotropic characteristics of the semiconductor resistivity and the Seebeck coefficient comprises the following steps: acquiring the resista...
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| creator | SUN DEZHU LI YUSHI HUANG XILIN HU XIAOKAI |
| description | The invention provides a method for evaluating anisotropic characteristics of semiconductor resistivity and Seebeck coefficient. The method for evaluating the anisotropic characteristics of the semiconductor resistivity and the Seebeck coefficient comprises the following steps: acquiring the resistance of a to-be-tested sample in a first direction; respectively determining a first contact point and a second contact point of the first probe and the second probe with the to-be-detected sample in the first direction; determining a mathematical relational expression according to the position of the first contact point and the position of the second contact point; determining the resistivity of the to-be-measured sample according to the mathematical relationship and the resistance; obtaining a temperature difference between the first contact point and the second contact point; determining a Seebeck coefficient of the to-be-detected sample according to the temperature difference; acquiring the resistivity and Seebe |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN117471281A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN117471281A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN117471281A3</originalsourceid><addsrcrecordid>eNqNizEKwkAQANNYiPqH9QEWp0JsJUSsbLQP52aPLCa3x-0m4O-N4AOsppiZZRHqyfejN5YIA1knLQTJ4COrWJbECNj57NEosxqjggRQGhgltiPaHGfSr5rY3vPYwp3oSfgCFAqBkSnaulgE3yttflwV20v9qK47StKQJo8UyZrq5lx5LN3-5M6Hf5oPKIBA2w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Evaluation method for anisotropic characteristics of semiconductor resistivity and Seebeck coefficient</title><source>esp@cenet</source><creator>SUN DEZHU ; LI YUSHI ; HUANG XILIN ; HU XIAOKAI</creator><creatorcontrib>SUN DEZHU ; LI YUSHI ; HUANG XILIN ; HU XIAOKAI</creatorcontrib><description>The invention provides a method for evaluating anisotropic characteristics of semiconductor resistivity and Seebeck coefficient. The method for evaluating the anisotropic characteristics of the semiconductor resistivity and the Seebeck coefficient comprises the following steps: acquiring the resistance of a to-be-tested sample in a first direction; respectively determining a first contact point and a second contact point of the first probe and the second probe with the to-be-detected sample in the first direction; determining a mathematical relational expression according to the position of the first contact point and the position of the second contact point; determining the resistivity of the to-be-measured sample according to the mathematical relationship and the resistance; obtaining a temperature difference between the first contact point and the second contact point; determining a Seebeck coefficient of the to-be-detected sample according to the temperature difference; acquiring the resistivity and Seebe</description><language>chi ; eng</language><subject>MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240130&DB=EPODOC&CC=CN&NR=117471281A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240130&DB=EPODOC&CC=CN&NR=117471281A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUN DEZHU</creatorcontrib><creatorcontrib>LI YUSHI</creatorcontrib><creatorcontrib>HUANG XILIN</creatorcontrib><creatorcontrib>HU XIAOKAI</creatorcontrib><title>Evaluation method for anisotropic characteristics of semiconductor resistivity and Seebeck coefficient</title><description>The invention provides a method for evaluating anisotropic characteristics of semiconductor resistivity and Seebeck coefficient. The method for evaluating the anisotropic characteristics of the semiconductor resistivity and the Seebeck coefficient comprises the following steps: acquiring the resistance of a to-be-tested sample in a first direction; respectively determining a first contact point and a second contact point of the first probe and the second probe with the to-be-detected sample in the first direction; determining a mathematical relational expression according to the position of the first contact point and the position of the second contact point; determining the resistivity of the to-be-measured sample according to the mathematical relationship and the resistance; obtaining a temperature difference between the first contact point and the second contact point; determining a Seebeck coefficient of the to-be-detected sample according to the temperature difference; acquiring the resistivity and Seebe</description><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEKwkAQANNYiPqH9QEWp0JsJUSsbLQP52aPLCa3x-0m4O-N4AOsppiZZRHqyfejN5YIA1knLQTJ4COrWJbECNj57NEosxqjggRQGhgltiPaHGfSr5rY3vPYwp3oSfgCFAqBkSnaulgE3yttflwV20v9qK47StKQJo8UyZrq5lx5LN3-5M6Hf5oPKIBA2w</recordid><startdate>20240130</startdate><enddate>20240130</enddate><creator>SUN DEZHU</creator><creator>LI YUSHI</creator><creator>HUANG XILIN</creator><creator>HU XIAOKAI</creator><scope>EVB</scope></search><sort><creationdate>20240130</creationdate><title>Evaluation method for anisotropic characteristics of semiconductor resistivity and Seebeck coefficient</title><author>SUN DEZHU ; LI YUSHI ; HUANG XILIN ; HU XIAOKAI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117471281A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SUN DEZHU</creatorcontrib><creatorcontrib>LI YUSHI</creatorcontrib><creatorcontrib>HUANG XILIN</creatorcontrib><creatorcontrib>HU XIAOKAI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUN DEZHU</au><au>LI YUSHI</au><au>HUANG XILIN</au><au>HU XIAOKAI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Evaluation method for anisotropic characteristics of semiconductor resistivity and Seebeck coefficient</title><date>2024-01-30</date><risdate>2024</risdate><abstract>The invention provides a method for evaluating anisotropic characteristics of semiconductor resistivity and Seebeck coefficient. The method for evaluating the anisotropic characteristics of the semiconductor resistivity and the Seebeck coefficient comprises the following steps: acquiring the resistance of a to-be-tested sample in a first direction; respectively determining a first contact point and a second contact point of the first probe and the second probe with the to-be-detected sample in the first direction; determining a mathematical relational expression according to the position of the first contact point and the position of the second contact point; determining the resistivity of the to-be-measured sample according to the mathematical relationship and the resistance; obtaining a temperature difference between the first contact point and the second contact point; determining a Seebeck coefficient of the to-be-detected sample according to the temperature difference; acquiring the resistivity and Seebe</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | Evaluation method for anisotropic characteristics of semiconductor resistivity and Seebeck coefficient |
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