Light emitting diode and light emitting device
The invention discloses a light-emitting diode and a light-emitting device. The light-emitting diode comprises an epitaxial layer and an optical component arranged on the light-emitting surface of the epitaxial layer. The epitaxial layer comprises a first semiconductor layer, an active layer and a s...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention discloses a light-emitting diode and a light-emitting device. The light-emitting diode comprises an epitaxial layer and an optical component arranged on the light-emitting surface of the epitaxial layer. The epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, the face, away from the active layer, of the first semiconductor layer of the epitaxial layer is a first face, the face, close to the active layer, of the first semiconductor layer of the epitaxial layer is a second face, the light-emitting diode emits light from the first face of the first semiconductor layer, and radiation light of the epitaxial layer has a first wavelength. The optical component comprises an optical lens arranged above the first surface and quantum dots dispersed in the optical lens, the radiation light excites the quantum dots in the optical lens so as to enable the quantum dots to generate light with a second wavelength, and the second w |
---|