Hafnium oxide-based ultrathin photoelectric transistor based on two-dimensional channel

The invention discloses a hafnium-oxide-based ultrathin phototransistor based on a two-dimensional channel. The hafnium-oxide-based ultrathin phototransistor sequentially comprises a substrate; the hafnium oxide-based ferroelectric back gate dielectric layer covers the substrate, and the hafnium oxide-based ferroelectric back gate dielectric layer adopts an aluminum-doped hafnium oxide ferroelectric film; the source-drain composite electrode metal layers are arranged at two ends of the hafnium oxide-based ferroelectric back gate dielectric layer; and the two-dimensional semiconductor channel is arranged on the surface of the hafnium oxide-based ferroelectric back gate dielectric layer. The ferroelectric remnant polarization field is used as a floating gate to regulate and control the electronic transport characteristics of the two-dimensional semiconductor, external gate voltage does not need to be applied during working, the sensor has the advantages of high sensitivity, quick response, low power consumption