Method of etching metal barrier layer and metal layer and method of manufacturing semiconductor device

The invention discloses a method of etching a metal barrier layer and a metal layer and a method of manufacturing a semiconductor device. The method comprises the following steps: forming a metal barrier layer and a metal layer on a substrate; and etching the metal barrier layer and the metal layer using the etching composition. The etching composition may include: an oxidizing agent selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methanesulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof; a metal etching inhibitor including a compound represented by Chemical Formula 1 as shown in the specification; and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof. 公开了蚀刻金属阻挡层和金属层的方法以及制造半导体器件的方法。所述方法包括：在衬底上形成金属阻挡层和金属层；以及使用蚀刻组合物蚀刻金属阻挡层和金属层。蚀刻组合物可以包括：氧化剂，选自于硝酸、溴酸、碘酸、高氯酸、过溴酸、高碘酸、硫酸、甲磺酸、对甲苯磺酸、苯磺酸或它们的组合；金属蚀刻抑制剂，包括由如在说明书中所示的化学式1表示的化合物；以及金属氧化物