Three-dimensional NAND memory device and manufacturing method

A method of forming a three-dimensional (3D) NAND memory device includes forming a gate line slot through a plurality of alternating layers of oxide layers and conductive material layers, where the conductive material layers are also formed on sidewalls and a bottom of the gate line slot; executing...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XUE LEI, HUO ZONGLIANG, XU BO, YAN LONGXIANG, WANG FAZHAN, XU WEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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