Plasma processing apparatus and temperature control method

The invention relates to a plasma processing apparatus and a temperature control method. Even if the number of heaters is increased, the increase of the power capacity of a power supply for supplying power to the heaters is suppressed. The susceptor is disposed in the plasma processing chamber. The electrostatic chuck is disposed on an upper portion of the base and has a first portion and a second portion. The first heater electrode layer group includes at least one heater electrode layer disposed within the first portion. The second heater electrode layer group includes at least one heater electrode layer disposed within the second portion. The power supply is electrically connected to the first heater electrode layer group and the second heater electrode layer group. The control unit performs control so as to periodically and sequentially supply DC current from the power supply to each heater electrode layer included in the first heater electrode layer group and each heater electrode layer included in the s