Ingot casting single crystal thermal field device

The invention relates to the technical field of photovoltaic cells, in particular to an ingot casting single crystal thermal field device which comprises an ingot casting furnace, a heating kettle, a crucible, an air inlet pipe, a one-way air inlet assembly and an air injection assembly, the heating kettle is arranged in the ingot casting furnace, a kettle cover is arranged at the top of the heating kettle, and an exhaust port is formed in the preset position of the kettle cover. The one-way gas inlet assembly and the gas injection assembly are arranged, argon is uniformly dispersed into the crucible through the gas injection assembly, so that the argon and gas impurities volatilized from a silicon solution are fully mixed, and the mixed waste gas flows from the edge area of the crucible to the middle area under the action of gas pressure difference. The argon sprayed out of the gas spraying assembly can be sprayed into the crucible more dispersedly and is more fully mixed with gas impurities in the crucible,