Three-dimensional vertical memristor and preparation method thereof

The invention provides a three-dimensional vertical memristor and a preparation method thereof. The three-dimensional vertical memristor comprises a substrate; the insulating layers and the word line layers are located on the substrate and stacked alternately; the insulating layer at least comprises three layers; at least two word line layers are arranged; the oxygen ion capturing capability of at least one word line layer is greater than or equal to a first preset value; the oxygen ion capturing capability of at least one word line layer is smaller than a first preset value; the channel penetrates through the insulating layer and the word line layer; the storage layer, the selection layer and the bit line layer are located on the side wall of the channel; the selection layer is located on one side of the storage layer away from the channel; the bit line layer is located on one side of the selection layer away from the channel. According to the invention, the word line layers with different oxygen ion capturi