Grid boosting IGBT (Insulated Gate Bipolar Translator) opening circuit based on auxiliary boosting circuit

The invention relates to the technical field of control of a power semiconductor device IGBT (Insulated Gate Bipolar Translator), in particular to a grid boost IGBT opening circuit based on an auxiliary boost circuit, which solves the technical problems in the background technology and comprises a first MOS (Metal Oxide Semiconductor) tube T1, a second MOS tube T2, a buffer converter U4, a Schmidt inverter U5, a triode T12 and the auxiliary boost circuit, the auxiliary booster circuit comprises a triode T3, a triode T4, a capacitor C4, a resistor R8, a diode D4, a diode D5, a comparator U1 and an NAND gate U3; the drain electrode of the first MOS transistor T1 is connected with the source electrode of the second MOS transistor T2, and the connecting line of the two is connected with the P15V output end through the diode D1. The source electrode of the first MOS transistor T1 is connected to the P25V output end. According to the circuit, the grid voltage can be increased under the condition of not additionally