Power device capable of improving avalanche tolerance of super junction structure and preparation method

The invention relates to a power device capable of improving avalanche tolerance of a super junction structure and a preparation method. The active area is prepared in a central area of a semiconductor substrate, the terminal protection area is located on the outer ring of the active area, the terminal protection area surrounds the active area, and the active area comprises a front cellular unit and a super junction unit, the super junction unit comprises a plurality of first conductive type columns and second conductive type columns which are alternately distributed in sequence, and the conductive type of the first conductive type columns is consistent with the conductive type of the semiconductor substrate; any second conduction type column comprises a plurality of second conduction type column doped regions which are sequentially filled in the second conduction type column groove in an epitaxial mode, and the doping concentration of the second conduction type column doped regions is sequentially increased