Method for inhibiting influence of total dose effect on threshold voltage of device

The invention provides a method for inhibiting the influence of the total dose effect on the threshold voltage of a device, a multi-independent-gate field effect transistor (MuFET) is adopted as the device, the multi-independent-gate field effect transistor adopts a carbon nanotube (CNT) as a channe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU YIWEI, QIN YIZHANG, LU PENG, CAO JUEXIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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