Method for inhibiting influence of total dose effect on threshold voltage of device

The invention provides a method for inhibiting the influence of the total dose effect on the threshold voltage of a device, a multi-independent-gate field effect transistor (MuFET) is adopted as the device, the multi-independent-gate field effect transistor adopts a carbon nanotube (CNT) as a channel material and adopts an independent gate structure, the independent gate structure comprises at least two CNT gate electrodes, and the CNT gate electrodes are not intersected with each other; when the device is irradiated and the threshold voltage of the device deviates due to the total dose effect, pressure is applied to a single grid electrode as required, and each independent grid electrode can modulate the barrier height in a channel through a field effect, so that the conductivity of the channel CNT is modulated, and the threshold voltage drift of the device is inhibited. 本发明提供一种抑制总剂量效应对器件的阈值电压影响的方法，采用多独立栅场效应管(MuFET)作为器件，所述多独立栅场效应管采用碳纳米管(CNT)作为沟道材料，并采用独立栅结构，所述独立栅结构包括至少两个CNT栅电极，各CNT栅电极之间互不相交；当器件遭受辐照后，由于总剂量效应导致