Method for improving connection strength and conductivity of bismuth telluride-based thermoelectric material

The invention discloses a method for improving the connection strength and conductivity of a bismuth telluride-based thermoelectric material, and belongs to the technical field of semiconductor thermoelectric devices, and the method comprises the steps: S1, carrying out the pretreatment of the bismuth telluride-based thermoelectric material; s2, the electroplated surface of the workpiece pretreated in the step S1 is put into an etching solution to be etched for 20 min at the room temperature, and the workpiece is taken out and washed with water; s3, the electroplated surface of the workpiece treated in the S2 is activated, and the workpiece is taken out and washed with water; s4, the activated workpiece is put into an electroplating nickel solution to be electroplated; s5, cleaning the nickel-plated surface for multiple times by using deionized water; then putting into an activating tank, and carrying out interlayer activating treatment by adopting an activating solution; finally, deionized water is used for