Preparation of VO2 (A) nanowire with high length-diameter ratio for detecting H2S gas at room temperature

The invention relates to a preparation process of a one-dimensional VO2 (A) nanowire with a high length-diameter ratio (144.7). In the preparation process, vanadium pentoxide (V2O5) is used as a vanadium source, oxalic acid (C2H2O4. 2H2O) is used as a reducing agent, and no extra surfactant is neede...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LIANG JIRAN, WANG KANGQIANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention relates to a preparation process of a one-dimensional VO2 (A) nanowire with a high length-diameter ratio (144.7). In the preparation process, vanadium pentoxide (V2O5) is used as a vanadium source, oxalic acid (C2H2O4. 2H2O) is used as a reducing agent, and no extra surfactant is needed as an additive. The VO2 (A) nanowire with a high length-diameter ratio and a smooth surface is successfully synthesized through a simple and convenient one-step hydrothermal method. According to the method, the process complexity of preparing the VO2 (A) nanowire is reduced, the requirements of low cost and large-scale preparation are met, and the prepared nanowire is high in crystallinity and free of any other phases or impurities. The gas sensitive response of a gas sensor based on the VO2 (A) nanowire to 10ppm H2S at room temperature is up to 2.09, which indicates that the prepared VO2 (A) nanowire is a gas sensitive material with wide application prospect. 本发明涉及一种具有高长径比(144.7)的一维VO2(A)纳米线的制备工艺。制备过程以五氧化二钒(V2O5