All-metal technology bar manufacturing method capable of achieving single-chip light emitting

The invention relates to the technical field of semiconductor lasers, and discloses a manufacturing method of an all-metal process bar capable of realizing single-chip luminescence, which is characterized in that a photoelectric isolation groove is designed to block P-surface metal, and a P-surface electrode of the whole bar is decomposed into a plurality of decomposed P-surface electrodes taking a single chip as a unit; therefore, the injection current is changed to act on the electrode surface, and an effective reference is provided for next packaging. According to the all-metal process bar manufacturing method capable of realizing single-chip luminescence, an all-metal process is adopted, a P-surface metal electrode prepared by a traditional negative photoresist stripping method is avoided, the production efficiency is improved, meanwhile, epitaxial wafer surface abnormalities such as negative photoresist residues, reagent residues and metal edge residues caused by stripping are reduced, the production yie