Memory with crossover bit lines for improved burst mode read operations

A memory with crossover bit lines for improved burst mode read operations and related methods are provided. A memory system includes a memory array including a first set of memory cells coupled to a first internal word line and a second set of memory cells coupled to a first external word line. The memory system includes a control unit configured to generate a control signal concurrently for: validating a first word line signal on a first internal word line coupled to each of a first plurality of internal bit lines; and validating a second word line signal on a first external word line coupled to each of the first plurality of external bit lines, where each of the first plurality of external bit lines includes a first portion configured to span over or under a corresponding internal bit line, and outputting data from each of the first group of memory cells and the second group of memory cells as a portion of the burst. 提供了一种用于改进突发模式读取操作的具有跨越位线的存储器和相关方法。存储器系统包括存储器阵列，存储器阵列包括被耦合到第一内部字线的第一组存储器单元和被耦合到第一外部字线的第二组存储器