Super-radiation light-emitting diode
The invention provides a super-radiation light-emitting diode. The super-radiation light-emitting diode comprises a substrate, a buffer layer, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, a second limiting layer and an ohmic contact layer which are stac...
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| creator | YAO ZHONGHUI YANG GUOWEN LUO WEI |
| description | The invention provides a super-radiation light-emitting diode. The super-radiation light-emitting diode comprises a substrate, a buffer layer, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, a second limiting layer and an ohmic contact layer which are stacked from bottom to top. The active layer comprises a quantum dot stacking layer and a quantum well layer. The quantum dot stacking layer comprises n groups of quantum dot units, and each group of quantum dot units comprises a quantum dot single layer, a covering layer and a spacing layer which are stacked from bottom to top. The quantum well layer is made of InxGa (1-x) As, and x is larger than or equal to 0.22 and smaller than or equal to 0.38. And the position of a light-emitting peak of the quantum well layer is between a ground-state light-emitting peak and an excited-state light-emitting peak of the quantum dot stacking layer. According to the structural arrangement of the active layer in the application, the |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN117393666A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN117393666A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN117393666A3</originalsourceid><addsrcrecordid>eNrjZFAJLi1ILdItSkzJTCzJzM9TyMlMzyjRTc3NLCnJzEtXSMnMT0nlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhubGlsZmZmaOxsSoAQAisScB</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Super-radiation light-emitting diode</title><source>esp@cenet</source><creator>YAO ZHONGHUI ; YANG GUOWEN ; LUO WEI</creator><creatorcontrib>YAO ZHONGHUI ; YANG GUOWEN ; LUO WEI</creatorcontrib><description>The invention provides a super-radiation light-emitting diode. The super-radiation light-emitting diode comprises a substrate, a buffer layer, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, a second limiting layer and an ohmic contact layer which are stacked from bottom to top. The active layer comprises a quantum dot stacking layer and a quantum well layer. The quantum dot stacking layer comprises n groups of quantum dot units, and each group of quantum dot units comprises a quantum dot single layer, a covering layer and a spacing layer which are stacked from bottom to top. The quantum well layer is made of InxGa (1-x) As, and x is larger than or equal to 0.22 and smaller than or equal to 0.38. And the position of a light-emitting peak of the quantum well layer is between a ground-state light-emitting peak and an excited-state light-emitting peak of the quantum dot stacking layer. According to the structural arrangement of the active layer in the application, the</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240112&DB=EPODOC&CC=CN&NR=117393666A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240112&DB=EPODOC&CC=CN&NR=117393666A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAO ZHONGHUI</creatorcontrib><creatorcontrib>YANG GUOWEN</creatorcontrib><creatorcontrib>LUO WEI</creatorcontrib><title>Super-radiation light-emitting diode</title><description>The invention provides a super-radiation light-emitting diode. The super-radiation light-emitting diode comprises a substrate, a buffer layer, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, a second limiting layer and an ohmic contact layer which are stacked from bottom to top. The active layer comprises a quantum dot stacking layer and a quantum well layer. The quantum dot stacking layer comprises n groups of quantum dot units, and each group of quantum dot units comprises a quantum dot single layer, a covering layer and a spacing layer which are stacked from bottom to top. The quantum well layer is made of InxGa (1-x) As, and x is larger than or equal to 0.22 and smaller than or equal to 0.38. And the position of a light-emitting peak of the quantum well layer is between a ground-state light-emitting peak and an excited-state light-emitting peak of the quantum dot stacking layer. According to the structural arrangement of the active layer in the application, the</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAJLi1ILdItSkzJTCzJzM9TyMlMzyjRTc3NLCnJzEtXSMnMT0nlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhubGlsZmZmaOxsSoAQAisScB</recordid><startdate>20240112</startdate><enddate>20240112</enddate><creator>YAO ZHONGHUI</creator><creator>YANG GUOWEN</creator><creator>LUO WEI</creator><scope>EVB</scope></search><sort><creationdate>20240112</creationdate><title>Super-radiation light-emitting diode</title><author>YAO ZHONGHUI ; YANG GUOWEN ; LUO WEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117393666A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YAO ZHONGHUI</creatorcontrib><creatorcontrib>YANG GUOWEN</creatorcontrib><creatorcontrib>LUO WEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAO ZHONGHUI</au><au>YANG GUOWEN</au><au>LUO WEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Super-radiation light-emitting diode</title><date>2024-01-12</date><risdate>2024</risdate><abstract>The invention provides a super-radiation light-emitting diode. The super-radiation light-emitting diode comprises a substrate, a buffer layer, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, a second limiting layer and an ohmic contact layer which are stacked from bottom to top. The active layer comprises a quantum dot stacking layer and a quantum well layer. The quantum dot stacking layer comprises n groups of quantum dot units, and each group of quantum dot units comprises a quantum dot single layer, a covering layer and a spacing layer which are stacked from bottom to top. The quantum well layer is made of InxGa (1-x) As, and x is larger than or equal to 0.22 and smaller than or equal to 0.38. And the position of a light-emitting peak of the quantum well layer is between a ground-state light-emitting peak and an excited-state light-emitting peak of the quantum dot stacking layer. According to the structural arrangement of the active layer in the application, the</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | Super-radiation light-emitting diode |
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