Super-radiation light-emitting diode

The invention provides a super-radiation light-emitting diode. The super-radiation light-emitting diode comprises a substrate, a buffer layer, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, a second limiting layer and an ohmic contact layer which are stacked from bottom to top. The active layer comprises a quantum dot stacking layer and a quantum well layer. The quantum dot stacking layer comprises n groups of quantum dot units, and each group of quantum dot units comprises a quantum dot single layer, a covering layer and a spacing layer which are stacked from bottom to top. The quantum well layer is made of InxGa (1-x) As, and x is larger than or equal to 0.22 and smaller than or equal to 0.38. And the position of a light-emitting peak of the quantum well layer is between a ground-state light-emitting peak and an excited-state light-emitting peak of the quantum dot stacking layer. According to the structural arrangement of the active layer in the application, the