Gallium-indium-oxide photoelectric detector and preparation method thereof

According to the gallium-indium-oxide photoelectric detector and the preparation method thereof provided by the invention, the photoelectric detector is prepared based on a flexible substrate of mica and has excellent bending resistance, that is, the device can be bent for thousands of times according to a certain angle while the performance is almost unchanged, and the gallium-indium-oxide photoelectric detector can be applied to wearable photoelectric detectors. According to the flexible gallium-indium-oxide photoelectric detector, a layer of gallium-indium-oxide thin film is grown on a mica substrate by using pulse laser deposition equipment, annealing is performed in air by using a high-temperature annealing furnace, and finally a Ti/Au interdigital electrode is grown on the gallium-indium-oxide thin film by using a metal mask by using a magnetron sputtering method, so that the flexible gallium-indium-oxide photoelectric detector is prepared. The gallium-indium-oxide photoelectric detector is successfully