Heterojunction density controllable MoSe2/SnSe heterogeneous film, solar cell film material and preparation method thereof
The invention provides a MoSe2/SnSe heterogeneous thin film with controllable heterojunction density, a solar cell thin film material and a preparation method of the MoSe2/SnSe heterogeneous thin film. The preparation method comprises the following steps: taking MoSe2 powder and SnSe powder as raw m...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a MoSe2/SnSe heterogeneous thin film with controllable heterojunction density, a solar cell thin film material and a preparation method of the MoSe2/SnSe heterogeneous thin film. The preparation method comprises the following steps: taking MoSe2 powder and SnSe powder as raw materials, and respectively obtaining a nanosheet organic suspension taking acetone/ethanol (the volume ratio is 1: (0.1-5)) as a solvent through grinding and liquid phase stripping; and depositing the MoSe2/SnSe heterojunction thin film on the ITO/PET substrate by using an electrophoretic deposition technology. The density of the heterojunction in the MoSe2/SnSe thin film is controlled by adjusting the crack density of the ITO substrate. And the MoSe2/SnSe heterojunction thin film is used for the solar cell. The preparation method disclosed by the invention has the advantages of simple operation, simple preparation process, high deposition rate, low cost and the like; and the MoSe2/SnSe thin film with the controlla |
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