Deposition method of semiconductor device

The invention relates to a deposition method of a semiconductor device. A method includes depositing a first material on a sidewall surface of a recess in a substrate, where the first material is an electrically conductive material; depositing a second material on a bottom surface of the recess using a plasma assisted deposition process after depositing the first material; and removing the first material after depositing the second material. 本公开涉及半导体器件的沉积方法。一种方法，包括：将第一材料沉积在衬底中的凹部的侧壁表面上，其中，第一材料是导电材料；在沉积第一材料之后，使用等离子体辅助沉积工艺在凹部的底表面上沉积第二材料；以及在沉积第二材料之后，去除第一材料。