Active frequency selective surface structure based on PIN diode

The invention discloses an active frequency selective surface structure based on PIN diodes, which belongs to the technical field of microwaves and comprises at least one resonant unit arranged periodically. The resonance unit is sequentially provided with a first substrate dielectric layer, a first metal frequency selection surface layer, a first dielectric structure layer, a second metal frequency selection surface layer, a second substrate dielectric layer, a second dielectric structure layer, a third metal frequency selection surface layer and a third substrate dielectric layer from top to bottom; the first metal frequency selection surface layer and the second metal frequency selection surface layer are both of an inductance square ring structure, and the third metal frequency selection surface layer is of a PIN diode ring structure. The active frequency selective surface structure based on the PIN diode is simple in structure, simple and convenient in feeding mode, capable of achieving switching between