In0. 2Ga1. 8O3/Cs3Cu2I5 composite nanomaterial, preparation method thereof and ultraviolet photoelectric detector

The invention discloses an In0. 2Ga1. 8O3/Cs3Cu2I5 composite nanomaterial, a preparation method thereof and an ultraviolet photoelectric detector, and relates to the technical field of photoelectric detection. The material is composed of a substrate, an In < 0.2 > Ga < 1.8 > O < 3 > nano film and a Cs3Cu2I5 nano film. The preparation method comprises the following steps: firstly, preparing an In < 0.2 > Ga < 1.8 > O < 3 > precursor solution from gallium nitrate nonahydrate, indium nitrate tetrahydrate, polyoxyethylene lauryl ether and citric acid monohydrate; the preparation method comprises the following steps: dissolving CsI and CuI in a mixed solvent of DMSO and DMF to obtain a Cs3Cu2I5 precursor solution; spin-coating an In < 0.2 > Ga < 1.8 > O < 3 > precursor solution on the surface of the substrate, drying and cooling; and repeating the steps and sintering to obtain the In < 0.2 > Ga < 1.8 > O < 3 > nano material. Then, a Cs3Cu2I5 precursor solution is subjected to spin coating; and annealing to obtain