Terahertz Schottky diode chip and preparation method and test method thereof

The embodiment of the invention provides a terahertz Schottky diode chip and a preparation method and a test method thereof, and belongs to the technical field of terahertz chips. According to the terahertz Schottky diode chip, the suspended beam type lead with the groove is arranged on the side face of the electrode layer of the terahertz Schottky diode chip, the beam type lead is electrically connected with the electrode layer, the electrode layer of the chip can be electrically connected with the outside through the beam type lead when the chip is tested, and direct contact between the electrode layer and a test probe is avoided; furthermore, a fragile groove structure is arranged at the position, spanning the edge of the epitaxial layer, of the beam-type lead, and the part, outside the edge area of the epitaxial layer, of the beam-type lead is suspended; after the test, the beam-type lead can be broken at the groove through an external force so as to remove the beam-type lead at the suspended part. Accord