Vehicle-gauge-level MOS tube with low on-resistance and preparation method of vehicle-gauge-level MOS tube
The invention provides a low-on-resistance vehicle gauge level MOS transistor and a preparation method thereof, and relates to the technical field of electronics, the MOS transistor comprises a mounting shell, a chip arranged in the mounting shell, a heat conduction material filled in the mounting s...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a low-on-resistance vehicle gauge level MOS transistor and a preparation method thereof, and relates to the technical field of electronics, the MOS transistor comprises a mounting shell, a chip arranged in the mounting shell, a heat conduction material filled in the mounting shell, a pin arranged on the outer wall of one side of the mounting shell, the pin connected with the chip, a heat dissipation plate arranged at the bottom of the mounting shell, and first heat dissipation assemblies arranged on the front and rear side walls of the mounting shell, the first heat dissipation assembly comprises a plurality of first heat dissipation fins, the first heat dissipation fins are arranged at equal intervals in the length direction of the side wall of the installation shell, a second heat dissipation assembly is arranged on the upper surface of the installation shell, the second heat dissipation assembly comprises a plurality of second heat dissipation fins, and the second heat dissipation fi |
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