Raw material treatment method for growing beta-phase gallium oxide single crystal by cold crucible method

The invention discloses a raw material treatment method for growing a beta-phase gallium oxide single crystal by a cold crucible method. The method comprises the following steps: 1, weighing raw materials, fully grinding, compacting in a crucible, and covering with a crucible cover with an arc-shaped central part; 2, putting the crucible into a muffle furnace for calcining; 3, after the raw materials in the crucible are calcined, a crucible cover is opened, the sintering shape of the raw materials is collapsed in an equal proportion according to the shape of the crucible and the shape of the crucible cover, and the raw materials are taken out; 4, the top of the taken raw material is in a pit shape, the size of the aluminum oxide raw material is measured, and the volume ratio before sintering and after sintering is calculated; and 5, the treated raw material is placed in a water-cooling crucible system composed of red copper pipes and used for growing gallium oxide crystals through a cold crucible method, and