Light emitting diode

The invention provides a light emitting diode, and belongs to the field of semiconductor devices. The light-emitting diode comprises a light-emitting unit. The light-emitting unit comprises a blue light-emitting unit, a first spacing layer, a green light-emitting unit, a second spacing layer and a red light-emitting unit which are stacked in sequence; the blue light emitting unit comprises a first semiconductor layer, a blue light active layer and a second semiconductor layer which are stacked in sequence; the green light-emitting unit comprises a third semiconductor layer, a green light active layer and a fourth semiconductor layer which are stacked in sequence; the red light emitting unit comprises a fifth semiconductor layer, a red light active layer and a sixth semiconductor layer which are stacked in sequence; the first spacing layer and the second spacing layer comprise a plurality of periodic porous GaN sub-layers and GaN sub-layers, the first spacing layer and the second semiconductor layer form a tun