High-temperature wide bandgap power module and preparation method thereof

The invention provides a high-temperature wide band gap power module and a preparation method thereof. According to the high-temperature wide-bandgap power module, a Parylene-HT thin film layer covering a SiC power chip is arranged in a cavity, an inorganic thin film layer is arranged on the surface of the Parylene-HT thin film layer, and the inorganic thin film layer and the Parylene-HT thin film layer are compounded to form a high-temperature-resistant strong-insulation shape-preserving coating; the thermal expansion coefficient of the composite shape-retaining coating is far lower than that of organic silica gel, and the thickness of the composite shape-retaining coating is far lower than that of the organic silica gel, so that the thermal mechanical stress introduced by the shape-retaining coating at high temperature is far lower than that of the organic silica gel, the service life of a bonding wire is prolonged, and the working stability of the module is improved; meanwhile, the shell is sealed by adopt