Thin film plate capacitor and preparation method and application thereof

The invention belongs to the technical field of capacitors, and particularly relates to a thin film plate capacitor and a preparation method and application thereof. The thin film plate capacitor provided by the invention comprises a bottom electrode layer, a substrate layer, a lower electrode layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHAO WEILI, WANG SHUAI, DUAN CHENGHUI, XU YANCHU, DONG HEYU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention belongs to the technical field of capacitors, and particularly relates to a thin film plate capacitor and a preparation method and application thereof. The thin film plate capacitor provided by the invention comprises a bottom electrode layer, a substrate layer, a lower electrode layer, a dielectric layer, an upper electrode layer, a buffer layer and a top electrode layer which are stacked in sequence, each of the substrate layer and the buffer layer comprises a plurality of through holes, the diameter of any through hole in the substrate layer and the buffer layer is independently 50-100 microns, the distribution density of the through holes in the substrate layer and the buffer layer is independently 100-200/mm < 2 >, and the through holes in the substrate layer and the buffer layer are filled with metal; the thickness of the dielectric layer is 100-1000 nm, and the thickness of the upper electrode layer is smaller than or equal to 100 nm. The dielectric layer in the thin film plate capacitor