Feeding method for avoiding abnormity of polycrystalline silicon reduction furnace

The invention relates to the technical field of polycrystalline silicon reduction furnaces, in particular to a feeding method for avoiding abnormity of a polycrystalline silicon reduction furnace. The gas inlet temperature of the reduction furnace is kept at 100 DEG C or above, and the pipeline valv...

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Bibliographische Detailangaben
Hauptverfasser: YANG QIANGQIANG, SHI LIANGCHENG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to the technical field of polycrystalline silicon reduction furnaces, in particular to a feeding method for avoiding abnormity of a polycrystalline silicon reduction furnace. The gas inlet temperature of the reduction furnace is kept at 100 DEG C or above, and the pipeline valve with the opening degree of 1% is arranged on the trichlorosilane gas inlet pipeline, so that liquid deposited in the gas inlet pipeline is prevented from entering the reduction furnace, the influence of burrs on the quality of a polycrystalline silicon product caused by atomization silicon core growth in the reduction furnace is avoided, meanwhile, a base plate in the reduction furnace is prevented from firing, and the service life of the polycrystalline silicon product is prolonged. Equipment safety of the reduction furnace is protected, furnace shutdown time is saved, and production cost is reduced. The problem that in the prior art, the yield and quality are poor due to the fact that the polycrystalline silico