Method and apparatus for processing substrate

A method and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber; rotating a magnet disposed above the target at a default speed to direct sputtering material from the target toward a substrate support disposed within the processing volume; measuring an in-situ DC voltage in the processing volume, the in-situ DC voltage being different from the DC target voltage; determining whether the measured in-situ DC voltage is greater than a preset value; maintaining the magnet at the default speed if the measured in-situ DC voltage is less than or equal to the preset value; and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to reduce the in-situ DC voltage. 本文提供一种用于处理基板的方法和装置。例如，用于处理基板的方法包括：向靶施加DC靶电压，所述靶设置在等离子体处理腔室的处理容积内；以默认速度旋转设置在所述靶上方的磁体，以朝向设置在所述处理容积内的基板支撑件引导来自所述靶的溅射材