Transparent top gate overlapping type indium gallium zinc oxide thin film transistor prepared at low temperature and preparation method thereof

The invention relates to a transparent top gate overlapping type indium gallium zinc oxide thin film transistor prepared at low temperature and a preparation method thereof, and belongs to the technical field of transistors. The transistor comprises a substrate, a source electrode, a drain electrode, channel layers, a gate dielectric layer and a gate electrode, the source electrode and the drain electrode are arranged on the two sides of the substrate respectively, the channel layers are arranged on the source electrode, the drain electrode and the substrate in the middle of the source electrode and the drain electrode, and the gate dielectric layer and the gate electrode are sequentially arranged on the channel layers. A source electrode, a drain electrode and a gate electrode are located on the two sides of IGZO respectively to form a top gate overlapping type structure, patterning of the source electrode, the drain electrode and an IGZO active layer adopts a dry etching process, the top gate overlapping ty